Stranski-Krastanow growth of (112̄2) -oriented GaN/AlN quantum dots

Applied Physics Letters

Volumn 94, Issue 11, 2009, Pages

  Lahourcade, L ^a   Valdueza Felip, S ^a,b   Kehagias, T ^c   Dimitrakopulos, G P ^c   Komninou, P ^c   Monroy, E ^a  

^a CEA GRENOBLE   (France)

^b UNIVERSITY OF ALCALÁ   (Spain)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRIC FIELDS; GALLIUM NITRIDE; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; VACUUM DEPOSITION;

ALN; CRITICAL THICKNESS; CRYSTALLOGRAPHIC ORIENTATIONS; GA-RICH CONDITIONS; GAN ISLANDS; GAN/ALN QUANTUM DOTS; GROWTH INTERRUPTIONS; IN VACUUMS; INTERNAL ELECTRIC FIELDS; ISLANDING; PLASMA-ASSISTED MOLECULAR BEAM EPITAXIES; QUANTUM DOT SUPERLATTICES; SEMIPOLAR; STRANSKI-KRASTANOW GROWTH MODES; STRANSKI-KRASTANOW GROWTHS; TWO-DIMENSIONAL;

GALLIUM ALLOYS;

EID: 63049118620     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3095499     Document Type: Article

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