Influence of strain in the reduction of the internal electric field in GaN/AIN quantum dots grown on a-plane 6H-SiC

Physica Status Solidi (B) Basic Research

Volumn 243, Issue 7, 2006, Pages 1499-1507

  Cros, A ^a   Budagosky, J A ^a   Garcia Cristobal A ^a   Garro, N ^a   Cantarero, A ^a   Founta, S ^b   Mariette, H ^b   Daudin, B ^b  

^a UNIVERSITY OF VALENCIA   (Spain)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33745746667     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200565103     Document Type: Conference Paper

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