Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

Journal of Physics D: Applied Physics

Volumn 43, Issue 49, 2010, Pages

  Romero, M F ^a   Sanz, M M ^a   Tanarro, I ^b   Jimenez A ^c   Munoz E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b INSTITUTO DE ESTRUCTURA DE LA MATERIA   (Spain)

^c UNIVERSITY OF ALCALÁ   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DEVICE PROPERTIES; DISSOCIATION RATES; ELECTRIC CHARACTERISTICS; ELECTRICAL CHARACTERISTIC; FLOW RATIOS; H-CONTENT; PARALLEL PLATES; PLASMA COMPOSITION; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; PLASMA REACTORS; PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITIONS; RF PLASMA; RF-POWER; SAPPHIRE SUBSTRATES; SILICON NITRIDE THIN FILMS; SILICON SAMPLES;

DEPOSITION; DISSOCIATION; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GALLIUM NITRIDE; MASS SPECTROMETRY; PASSIVATION; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78650125180     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/49/495202     Document Type: Article

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