A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate

Journal of Semiconductors

Volumn 31, Issue 2, 2010, Pages

  Dongfang, Wang ^a,b   Xiaojuan, Chen ^a   Xinyu, Liu ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

AlGaN GaN HEMT; Ku band; Power

Indexed keywords

ALGAN/GAN HEMTS; CURRENT GAIN CUTOFF FREQUENCY; GATE LENGTH; GATE WIDTHS; KU BAND; LINEAR GAIN; MAXIMUM FREQUENCY OF OSCILLATIONS; OPERATING CONDITION; OUTPUT POWER; POWER DENSITIES; POWER-ADDED EFFICIENCY; SAPPHIRE SUBSTRATES;

CUTOFF FREQUENCY; GALLIUM NITRIDE; SAPPHIRE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77149159095     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/31/2/024001     Document Type: Article

References (4)

1. Vetur R, Wei Y, Green D S, et al 2005 High power, high efficiency, AlGaN/GaN HEMT technology for wireless base applications IEEE MTT-S Int. Microwave Symposium Digest 1 487
2. Takagi K, Kashiwabara Y, Masuda K, et al 2007 Ku-band AlGaN/GaN HEMT with over 30 W Proc. 2nd European Microwave Integrated Circuits Conf. p 169
3. Micovic M, Kurdoghilian A, Hashimoto P, et al 2006 GaN HFET for W-band power applications IEEE Int. Electron. Devices Meeting p 1
4. Feng Zhen, Zhang Zhiguo, Wang Yong, et al 2007 A recessed AlGaN/GaN HEMT with high output power in the X band Chinese J. Semiconductors 28 (11) 1773 (in Chinese)