High-temperature microwave performance of submicron AlGaN/GaN HEMTs on SiC

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 808-810

  Cuerdo, Roberto ^a   Sillero, Eugenio ^a   Romero, María Fátima ^a   Uren, Michael J ^b   di Forte Poisson, Maria Antoinette ^c   Munoz, Elías ^a   Calle, Frenando ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b QINETIQ   (United Kingdom)

^c ALCATEL THALES III V LAB   (France)

Author keywords

Gallium nitride; High temperature (HT); Highelectron mobility transistor (HEMT); Microwave performance

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRON MOBILITY; EQUIVALENT CIRCUITS; FINITE ELEMENT METHOD; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; III-V SEMICONDUCTORS; SILICON CARBIDE; SILICON COMPOUNDS;

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; EFFECT OF TEMPERATURE; FINITE ELEMENT SIMULATIONS; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH TEMPERATURE; INTRINSIC PARAMETERS; MICROWAVE PERFORMANCE; SMALL SIGNAL EQUIVALENT CIRCUIT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 68249138699     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2024964     Document Type: Article

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