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Volumn 47, Issue 4 PART 2, 2008, Pages 2488-2491
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Highly reliable Cu interconnect using low-hydrogen silicon nitride film deposited at low temperature as Cu-diffusion barrier
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Author keywords
Cu interconnects; Low temperature deposition; Plasma processing and deposition; Silicon nitride
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Indexed keywords
CONCENTRATION (PROCESS);
DATA STORAGE EQUIPMENT;
DEFECT DENSITY;
DIFFUSION BARRIERS;
ELECTROLYSIS;
HYDROGEN;
NITRIDES;
NONMETALS;
OPTICAL INTERCONNECTS;
PASSIVATION;
PLASMA DEPOSITION;
PLASMA DIAGNOSTICS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
PLASMAS;
RANDOM ACCESS STORAGE;
SEMICONDUCTOR DOPING;
SILICON;
SILICON NITRIDE;
CU INTERCONNECTS;
DIELECTRIC BREAKDOWNS;
DIFFUSION BARRIER LAYERS;
FLOW RATIOS;
HYDROGEN CONCENTRATIONS;
LOW HYDROGEN CONCENTRATIONS;
LOW TEMPERATURES;
LOW-TEMPERATURE DEPOSITION;
MAGNETORESISTIVE RANDOM ACCESS MEMORIES;
NITROGEN FLOWS;
NITROGEN RADICALS;
PASSIVATION LAYERS;
PLASMA PROCESSING AND DEPOSITION;
RELIABLE;
SIN FILMS;
COPPER;
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EID: 54249086231
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.2488 Document Type: Article |
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Times cited : (10)
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References (7)
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