High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1971-1973

  Cuerdo, R ^a   Calle, F ^a   Brana A F ^a   Cordier, Y ^b   Azize, M ^b   Baron, N ^b,c   Chenot, S ^b   Munoz E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b CRHEA CNRS   (France)

^c Picogiga International   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; SAPPHIRE; SILICON COMPOUNDS; SINGLE ELECTRON TRANSISTORS; SUBSTRATES; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY; WIDE BAND GAP SEMICONDUCTORS;

HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); LOWER TEMPERATURES; MOBILITY REDUCTION; OPTICAL PHONON SCATTERING; RELATIVE REDUCTION; SAPPHIRE SUBSTRATES; SINGLE GATE TRANSISTORS; TRANSCONDUCTANCES (GM);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 68249145217     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778555     Document Type: Conference Paper

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