Control of surfaces and heterointerfaces of AlGaN/GaN system for sensor devices and their on-chip integration on nanostructures

Current Applied Physics

Volumn 7, Issue 3, 2007, Pages 318-327

  Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

AlGaN; GaN; HFETs nanowires; MBE; Schottky diodes; Sensors

Indexed keywords

GALLIUM NITRIDE; LEAKAGE CURRENTS; NANOTUBES; PH SENSORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SENSORS;

HETEROINTERFACES; HFETS NANOWIRES; ON-CHIP INTEGRATION; OXYGEN GETTERING; POLAR LIQUIDS;

NANOSTRUCTURED MATERIALS;

EID: 33845879924     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2006.09.028     Document Type: Article

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