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Volumn 95, Issue 20, 2009, Pages

The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures

(3) Gonzalez Posada Flores F a Rivera, C a Muoz, E a

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CAPACITANCE; CARRIER CONCENTRATION; GALLIUM NITRIDE; III-V SEMICONDUCTORS; OHMIC CONTACTS; SEMICONDUCTOR ALLOYS; SILICON NITRIDE; TENSILE STRAIN;

ALGAN LAYERS; CAPACITANCE VOLTAGE MEASUREMENTS; CHEMICAL COMPOSITIONS; COMPRESSIVE STRAIN; CONTACT AREAS; CONTACT DEPOSITION; STRAIN STATE; X-RAY CHARACTERIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 70450270853 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3263955 Document Type: Article

Times cited : (24)

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