Nanoscale strained-Si MOSFET physics and modeling approaches: A review

Journal of Semiconductors

Volumn 31, Issue 10, 2010, Pages

  Chaudhry, Amit ^a   Roy, J N ^b   Joshi, Garima ^a  

^a PANJAB UNIVERSITY   (India)

^b Solar Semiconductor Private Limited   (India)

Author keywords

Mobility; SiGe; Strained Si; Technology CAD

Indexed keywords

ANALYTICAL MODEL; DEVICE MODELS; EFFECT OF STRAIN; MOBILITY; MODELING APPROACH; NANO SCALE; NANOSCALE MOSFETS; POTENTIAL BENEFITS; SIGE; STRAINED SILICON; STRAINED-SI; TECHNOLOGY CAD;

MATHEMATICAL MODELS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SILICON; SILICON ALLOYS; TECHNOLOGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78649434377     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/31/10/104001     Document Type: Review

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