Strained-Si channel heterojunction p-MOSFETs

Solid-State Electronics

Volumn 42, Issue 4, 1998, Pages 487-498

  Armstrong, G A ^a   Maiti, Chinmay K ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC CURRENTS; HETEROJUNCTIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; TRANSCONDUCTANCE;

HETEROJUNCTION P-MOSFETS;

MOSFET DEVICES;

EID: 0032041499     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00060-4     Document Type: Article

References (34)

1. Meyerson, B. S., Uram, K. J. and LeGoues, F. K., Appl. Phys. Lett., 1988, 53, 2555.
2. Fitzgerald, E. A., Xie, Y. H., Green, M. L., Brasen, D., Kortan, A. R., Michel, J., Mii, Y. J. and Wier, B. E., Appl. Phys. Lett., 1991, 59, 811.
3. LeGoues, F. K., Meyerson, B. S. and Morar, J. F., Phys. Rev. Lett., 1991, 66, 2903.
4. Stern, F. and Laux, S. E., Appl. Phys. Lett., 1992, 61, 1110.
5. Vogelsand, Th. and Hofmann, K. R., Appl. Phys. Lett., 1993, 63, 186.
6. Miyata, H., Yamada, T. and Ferry, D. K., Appl. Phys. Lett., 1993, 62, 2661.
7. Welser, J., Hoyt, J. L. and Gibbons, J. F., IEEE Electron Dev. Lett., 1994, 15, 100.
8. Rim, K., Welser, J., Hoyt, J. L. and Gibbons, J. F., IEEE IEDM Tech. Dig., 1995, 517.
9. Nayak, D. K., Goto, K., Yutani, A., Murota, J. and Shiraki, Y., IEEE Trans. Electron Dev., 1996, 43, 1709.
10. Verdonckt-Vandebroek, S., Crabbe, E. F., Meyerson, B. S., Harame, D. L., Restle, P. J., Stork, J. M. C., Meydanis, A. C., Stanis, C. L., Bright, A. A., Kroesen, G. M. W. and Warren, A. C., IEEE Electron Dev. Lett., 1991, 12, 447.
11. Chang, W. H., Davari, B., Wordeman, M. R., Taur, Y., Hsu, C. C. H. and Rodriguez, M. D., IEEE Trans. Electron Dev., 1992, 39, 959.
12. Davari, B., Chang, W. H., Petrillo, K., Wong, C. Y., Moy, D., Taur, Y., Wordeman, M. R., Sun, J. Y. C., Hsu, C. C. H. and Polcari, M. R., IEEE Trans. Electron Dev., 1992, 39, 967.
13. Silvaco International, User's Manual Silvaco-ATLAS. 1995.
14. Maiti, C. K., Dey, S. S., Bera, L. K., Nayak, D. K. and Chakrabarti, N. B., Solid State Electron, in press.
15. People, R. and Bean, J. C., Appl. Phys. Lett., 1986, 48, 538.
16. People, R., IEEE J. Quantum Elec., 1986, 22, 1696.
17. Swirhun, S. E., Kwark, Y. H. and Swanson, R. M., IEEE IEDM Tech. Dig., 1986, 24.
18. Klaassen, D. B. M., Slotboom, J. W. and de Graaff, H. C., Solid State Electron., 1992, 35, 125.
19. Poortmans, J., Jain, S. C., Totterdell, D. H. J., Caymax, M., Nijs, J. F., Mertens, R. P. and van Overstraeten, R., Solid State Electron., 1993, 36, 1763.
20. Slotboom, J. W. and de Graaff, H. C., Solid State Electron., 1976, 19, 857.
21. Li, S. H., Hinckley, J. M., Singh, J. and Bhattacharya, P. K., Appl. Phys. Lett., 1993, 63, 1393.
22. Vogelsang, T., Hofmann, F., Schafer, H., Risch, L. and Hofmann, K., Ext. Abstr. Conf. on Solid State Devices and Materials. 1994, p. 877.
23. Arora, N. D., Hauser, J. R. and Roulston, D. J., IEEE Trans. Electron Dev., 1982, 29, 292.
24. Nayak, D. K. and Chun, S. K., Appl. Phys. Lett., 1994, 64, 2514.
25. Caughey, D. M. and Thomas, R. E., Proc. IEEE, 1967, 55, 2192.
26. Shin, H., Tasch, A. F. Jr., Mazier, C. M. and Banerjee, S. K., IEEE Trans. Electron Dev., 1989, 36, 1117.
27. Shin, H., Yeric, G. M., Tasch, A. F. and Maziar, C. M., Solid State Electron., 1991, 34, 545.
28. Levitas, A., Phys. Rev., 1955, 99, 1810.
29. Selberherr, S., IEEE Trans. Electron Dev., 1989, 36, 1464.
30. Chrzanowska-Jeske, M. and Jaeger, R. C., IEEE Trans. Electron Dev., 1989, 36, 1475.
31. Verdonckt-Vandebroek, S., Crabbe, E. F., Meyerson, B. S., Harame, D. L., Restle, P. J., Stork, J. M. C. and Johnson, J. B., IEEE Trans. Electron Dev., 1994, 41, 90.
32. Bera, L. K., Ray, S. K., Nayak, D. K., Usami, N., Shiraki, Y. and Maiti, C. K., Appl. Phys. Lett., 1997, 70, 66.
33. Bera, L. K., Mukhopadhyay, M., Ray, S. K., Nayak, D. K., Usami, N., Shiraki, Y. and Maiti, C. K., Appl. Phys. Lett., 1997, 70, 217.
34. Armstrong, M. A., Antoniadis, D. A., Sadek, A., Ismail, K. and Stern, F., IEEE IEDM Tech. Dig., 1995, 761.