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Volumn 7, Issue 3, 2008, Pages 181-186

CMOS performance enhancement in hybrid orientation technologies

Author keywords

CMOS integrated circuits; Hybrid Orientation Technology; Mobility; Process induced strain; Strained Si; Technology CAD

Indexed keywords

COMPUTER NETWORKS; PROCESS ENGINEERING;

EID: 50949096007     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-008-0244-0     Document Type: Article
Times cited : (4)

References (8)
  • 1
    • 0004245602 scopus 로고    scopus 로고
    • Semiconductor Industry Association: San Jose, CA Also 2006 Update
    • Semiconductor Industry Association: International Technology Roadmap for Semiconductors. San Jose, CA (2005). Also 2006 Update
    • (2005) International Technology Roadmap for Semiconductors
  • 3
    • 4544377573 scopus 로고    scopus 로고
    • On the integration of CMOS with hybrid crystal orientations
    • Yang, M., et al.: On the integration of CMOS with hybrid crystal orientations. IEEE VLSI Tech. Digit. 160-161 (2004)
    • (2004) IEEE VLSI Tech. Digit. , pp. 160-161
    • Yang, M.1
  • 4
    • 0027886161 scopus 로고
    • Strain effects on device characteristics: Implementation in drift-diffusion simulators
    • Egley, J.L., Chidambarrao, D.: Strain effects on device characteristics: Implementation in drift-diffusion simulators. Solid-State Electron. 36, 1653-1664 (1993)
    • (1993) Solid-State Electron. , vol.36 , pp. 1653-1664
    • Egley, J.L.1    Chidambarrao, D.2
  • 5
    • 36149012552 scopus 로고
    • Deformation potentials and mobilities in non-planar crystals
    • Bardeen, J., Shockley, W.: Deformation potentials and mobilities in non-planar crystals. Phys. Rev. 80, 72-80 (1950)
    • (1950) Phys. Rev. , vol.80 , pp. 72-80
    • Bardeen, J.1    Shockley, W.2
  • 6
    • 36149003661 scopus 로고
    • Deformation potentials in silicon. III. Effects of a general strain on conduction and valence levels
    • Goroff, I., Kleinman, L.: Deformation potentials in silicon. III. Effects of a general strain on conduction and valence levels. Phys. Rev. 132, 1080-1084 (1963)
    • (1963) Phys. Rev. , vol.132 , pp. 1080-1084
    • Goroff, I.1    Kleinman, L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.