HiSIM: A drift-diffusion-based advanced MOSFET model for circuit simulation with easy parameter extraction

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2000, Pages 261-264

  Suetake, M ^a   Suematsu, K ^a   Nagakura, H ^a   Miura Mattausch, M ^a   Mattausch, H J ^a   Kumashiro, S ^a   Odanaka, S ^a   Yamaguchi, T ^a   Nakayama, N ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MATHEMATICAL MODELS;

DRIFT DIFFUSION APPROXIMATION;

MOSFET DEVICES;

EID: 0033681192     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)