Study of charge carrier quantization in strained Si-nMOSFETs

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 363-366

  Nguyen, C D ^a   Pham, A T ^a   Jungemann, C ^a   Meinerzhagen, B ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Inversion layer; MOS devices; MOSFET; Quantization effects

Indexed keywords

BAND STRUCTURE; BOUNDARY CONDITIONS; CHARGE CARRIERS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRON GAS; ELECTRON MOBILITY; ERROR ANALYSIS; FERMI LEVEL; MATHEMATICAL MODELS; POISSON EQUATION; QUANTUM THEORY; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

ENERGY SPLITTING; INVERSION LAYERS; PHONON SCATTERING; QUANTIZATION EFFECTS;

MOSFET DEVICES;

EID: 13244292559     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.055     Document Type: Conference Paper

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