BSIM5 MOSFET model

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 2, Issue , 2004, Pages 920-923

  Xi, Xuemei ^a   He, Jin ^a   Dunga, Mohan ^a   Wau, Hui ^a   Chan, Mansun ^a   Lin, Chung Hsun ^a   Heydari, Babak ^a   Niknejad, Ali M ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PHYSICS; GAUSS LAW; LAMBERT FUNCTIONS; PHYSICAL CORE;

CMOS INTEGRATED CIRCUITS; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FERMI LEVEL; FUNCTIONS; MATHEMATICAL MODELS; POISSON EQUATION;

MOSFET DEVICES;

EID: 21644471125     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Y. Cheng. etal., IEEE Trans. on Electron Devices, vol. 44, No. 2, pp. 277-287, February 1997.
2. BSIM. http://www.device.eecs.berkeley.edu/~bsim3.
3. G. Gildenblat, et al., pp233-240, CICC2003.
4. M. Miura-Mattausch. etal., pp258-261, WCM2003
5. M. Bucher, etal, pp. 670 - 673 WCM2002.
6. C. Galup-Montoro, etal., pp. 254-257, WCM2003.
7. II. Gummel and K.Singhal. IEEE Trans on Electron Devices, vol. 48, 1585-1593, 2001.