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Volumn 21, Issue 3, 1999, Pages 229-252

Perspectives on analytical modeling of small geometry MOSFETs in SPICE for low voltage/low power CMOS circuit design

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER AIDED DESIGN; COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DEVICE MODELS;

EID: 0033357510     PISSN: 09251030     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008373903657     Document Type: Article
Times cited : (5)

References (38)
  • 1
    • 0028447782 scopus 로고
    • MOSFET technology for low voltage/ low power applications
    • D. Foty and E. Nowak, "MOSFET technology for low voltage/ low power applications." IEEE Micro pp. 68-77, 1994.
    • (1994) IEEE Micro , pp. 68-77
    • Foty, D.1    Nowak, E.2
  • 2
    • 0016116644 scopus 로고
    • Design of ion implanted MOSFETs with very small physical dimensions
    • R. Dennard et al., "Design of ion implanted MOSFETs with very small physical dimensions." IEEE J. Sol. St. Circ. SC-9, pp. 256-268, 1974.
    • (1974) IEEE J. Sol. St. Circ. , vol.SC-9 , pp. 256-268
    • Dennard, R.1
  • 3
    • 0004001955 scopus 로고
    • University of California/Berkeley, Electronics Research Laboratory Memorandum No. UCB/ ERL M352
    • L. Nagel and D. Pederson, Simulation Program with Integrated Circuit Emphasis. University of California/Berkeley, Electronics Research Laboratory Memorandum No. UCB/ ERL M352, 1973.
    • (1973) Simulation Program with Integrated Circuit Emphasis
    • Nagel, L.1    Pederson, D.2
  • 4
    • 0003915801 scopus 로고
    • University of California/Berkeley, Electronics Research Laboratory Memorandum No. UCB/ ERL M520
    • L. Nagel, SPICE2: A Computer Program to Simulate Semiconductor Circuits. University of California/Berkeley, Electronics Research Laboratory Memorandum No. UCB/ ERL M520, 1975.
    • (1975) SPICE2: A Computer Program to Simulate Semiconductor Circuits
    • Nagel, L.1
  • 5
    • 0015107997 scopus 로고
    • Computer analysis of nonlinear circuits, excluding radiation (CANCER)
    • L. Nagel and R. Rohrer, "Computer analysis of nonlinear circuits, excluding radiation (CANCER)." IEEE J. Sol. St. Circ. SC-6, pp. 166-182, 1971.
    • (1971) IEEE J. Sol. St. Circ. , vol.SC-6 , pp. 166-182
    • Nagel, L.1    Rohrer, R.2
  • 6
    • 0009703767 scopus 로고
    • Design theory of a surface field-effect transistor
    • H. Ihantola and J. Moll, "Design theory of a surface field-effect transistor." Sol. St. Elec. 7, pp. 423-430, 1964.
    • (1964) Sol. St. Elec. , vol.7 , pp. 423-430
    • Ihantola, H.1    Moll, J.2
  • 9
    • 3343026644 scopus 로고
    • Effects of space charge layer widening in junction transistors
    • J. Early, "Effects of space charge layer widening in junction transistors." Proc. IRE 40, pp. 1401-1406, 1952.
    • (1952) Proc. IRE , vol.40 , pp. 1401-1406
    • Early, J.1
  • 10
    • 0043211490 scopus 로고
    • University of California/Berkeley, Electronics Research Laboratory Document M80/7
    • A. Vladimirescu and S. Liu, The Simulation of MOS ICs Using SPICE-2. University of California/Berkeley, Electronics Research Laboratory Document M80/7, 1980.
    • (1980) The Simulation of MOS ICs Using SPICE-2
    • Vladimirescu, A.1    Liu, S.2
  • 11
    • 0016113965 scopus 로고
    • A simple theory to predict the threshold voltage of short channel IGFETs
    • L. Yau, "A simple theory to predict the threshold voltage of short channel IGFETs." Sol. St. Elec. 17, pp. 1059-1063, 1974.
    • (1974) Sol. St. Elec. , vol.17 , pp. 1059-1063
    • Yau, L.1
  • 12
    • 84918189160 scopus 로고
    • Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces
    • O. Leistiko, A. Grove, and C. Sah, "Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces." IEEE Trans. Elec. Dev. ED-12, pp. 248-254, 1965.
    • (1965) IEEE Trans. Elec. Dev. , vol.ED-12 , pp. 248-254
    • Leistiko, O.1    Grove, A.2    Sah, C.3
  • 13
    • 0039690708 scopus 로고
    • On the effect of mobility variation on MOS device characteristics
    • D. Frohman-Bentchkowsky, "On the effect of mobility variation on MOS device characteristics." Proc. IEEE 56, pp. 217-218, 1968.
    • (1968) Proc. IEEE , vol.56 , pp. 217-218
    • Frohman-Bentchkowsky, D.1
  • 15
    • 0021501347 scopus 로고
    • The effect of high fields on MOS device and circuit performance
    • C. Sodini, P. Ko, and J. Moll, "The effect of high fields on MOS device and circuit performance." IEEE Trans. Elec. Dev. ED-31, pp. 1386-1393, 1984.
    • (1984) IEEE Trans. Elec. Dev. , vol.ED-31 , pp. 1386-1393
    • Sodini, C.1    Ko, P.2    Moll, J.3
  • 16
    • 0015330654 scopus 로고
    • Ion-Implanted complementary MOS transistors in low-voltage circuits
    • R. Swanson and J. Meindl, "Ion-Implanted complementary MOS transistors in low-voltage circuits." IEEE J. Sol. St. Circ. SC-7, pp. 146-153, 1972.
    • (1972) IEEE J. Sol. St. Circ. , vol.SC-7 , pp. 146-153
    • Swanson, R.1    Meindl, J.2
  • 18
    • 84939054117 scopus 로고
    • A simple current model for short-channel IGFET and its application to circuit simulation
    • L. Dang, "A simple current model for short-channel IGFET and its application to circuit simulation." IEEE J. Sol. St. Circ. SC-14, pp. 358-367, 1979.
    • (1979) IEEE J. Sol. St. Circ. , vol.SC-14 , pp. 358-367
    • Dang, L.1
  • 19
    • 0015346472 scopus 로고
    • An accurate large-signal MOS transistor model for use in computer-aided design
    • G. Merckel, J. Borel, and N. Cupcea, "An accurate large-signal MOS transistor model for use in computer-aided design." IEEE Trans. Elec. Dev. ED-19, pp. 681-690, 1972.
    • (1972) IEEE Trans. Elec. Dev. , vol.ED-19 , pp. 681-690
    • Merckel, G.1    Borel, J.2    Cupcea, N.3
  • 21
    • 0023401686 scopus 로고
    • BSIM: Berkeley short channel IGFET model for MOS transistors
    • B. Sheu, D. Scharfetter, P. Ko, and M. Jeng, "BSIM: Berkeley short channel IGFET model for MOS transistors." IEEE J. Sol. St. Circ. SC-22, pp. 558-566, 1987.
    • (1987) IEEE J. Sol. St. Circ. , vol.SC-22 , pp. 558-566
    • Sheu, B.1    Scharfetter, D.2    Ko, P.3    Jeng, M.4
  • 22
    • 0343300951 scopus 로고
    • University of California/Berkeley, Electronics Research Laboratory Memorandum No. UCB/ERL M85/22
    • A. Fung, A Subthreshold Conduction Model for BSIM. University of California/Berkeley, Electronics Research Laboratory Memorandum No. UCB/ERL M85/22, 1985.
    • (1985) A Subthreshold Conduction Model for BSIM
    • Fung, A.1
  • 23
    • 0020142882 scopus 로고
    • CAD model for threshold and subthreshold conduction in MOSFETs
    • P. Antognetti, D. Cavigia, and E. Profumo, "CAD model for threshold and subthreshold conduction in MOSFETs." IEEE J. Sol. St. Circ. SC-17, pp. 454-458, 1982.
    • (1982) IEEE J. Sol. St. Circ. , vol.SC-17 , pp. 454-458
    • Antognetti, P.1    Cavigia, D.2    Profumo, E.3
  • 24
    • 0003984121 scopus 로고    scopus 로고
    • Meta-Software, Inc., Campbell, California
    • HSPICE User's Manual. Meta-Software, Inc., Campbell, California, 1996.
    • (1996) HSPICE User's Manual
  • 25
    • 0031078092 scopus 로고    scopus 로고
    • A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation
    • Y. Cheng et al., "A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation." IEEE Trans. Elec. Dev. ED-44, pp. 277-287, 1997.
    • (1997) IEEE Trans. Elec. Dev. , vol.ED-44 , pp. 277-287
    • Cheng, Y.1
  • 26
    • 0002746446 scopus 로고
    • University of California/Berkeley, Electronics Research Laboratory Memorandum No. UCB/ERL M90/90
    • M. Jeng, Design and Modeling of Deep Submicrometer MOSFETs. University of California/Berkeley, Electronics Research Laboratory Memorandum No. UCB/ERL M90/90, 1990.
    • (1990) Design and Modeling of Deep Submicrometer MOSFETs
    • Jeng, M.1
  • 27
    • 0017932965 scopus 로고
    • A charge sheet model of the MOSFET
    • J. Brews, "A charge sheet model of the MOSFET." Sol. St. Elec. 21, pp. 345-355, 1978.
    • (1978) Sol. St. Elec. , vol.21 , pp. 345-355
    • Brews, J.1
  • 28
    • 19444362370 scopus 로고
    • University of California/Berkeley, Electronics Research Laboratory
    • J. Huang et al., BSIM3 Manual (Version 2.0). University of California/Berkeley, Electronics Research Laboratory, 1994.
    • (1994) BSIM3 Manual (Version 2.0)
    • Huang, J.1
  • 29
    • 0003997954 scopus 로고
    • University of California/Berkeley, Electronics Research Laboratory
    • Y. Cheng et al., BSIM3 Version 3.0 Manual. University of California/Berkeley, Electronics Research Laboratory, 1995.
    • (1995) BSIM3 Version 3.0 Manual
    • Cheng, Y.1
  • 31
    • 0003971897 scopus 로고
    • Unclassified Report NL-UR 003/94, Philips Electronics N.V.
    • R. Velghe, D. Klaassen, and F. Klaassen, MOS Model 9. Unclassified Report NL-UR 003/94, Philips Electronics N.V., 1994.
    • (1994) MOS Model 9
    • Velghe, R.1    Klaassen, D.2    Klaassen, F.3
  • 32
    • 0029342165 scopus 로고
    • An analytical MOS transistor model valid in all regions of operation and dedicated to low voltage and low current applications
    • C. Enz, F. Krummenacher, and E. Vittoz, "An analytical MOS transistor model valid in all regions of operation and dedicated to low voltage and low current applications." Analog Circ. Signal Proc. 8, pp. 83-114, 1995.
    • (1995) Analog Circ. Signal Proc. , vol.8 , pp. 83-114
    • Enz, C.1    Krummenacher, F.2    Vittoz, E.3
  • 33
    • 0020704690 scopus 로고
    • An investigation of the charge conservation problem for MOSFET circuit simulation
    • P. Yang, B. Epler, and P. Chatterjee, "An investigation of the charge conservation problem for MOSFET circuit simulation." IEEE J. Sol. St. Circ. SC-18, pp. 128-138, 1983.
    • (1983) IEEE J. Sol. St. Circ. , vol.SC-18 , pp. 128-138
    • Yang, P.1    Epler, B.2    Chatterjee, P.3
  • 34
    • 0026819378 scopus 로고
    • Statistical Modeling of Device Mismatch for Analog MOS Integrated Circuits
    • C. Michael and M. Ismail, "Statistical Modeling of Device Mismatch for Analog MOS Integrated Circuits." IEEE J. Sol. St. Circ. SC-27, pp. 154-166, 1992.
    • (1992) IEEE J. Sol. St. Circ. , vol.SC-27 , pp. 154-166
    • Michael, C.1    Ismail, M.2
  • 37
    • 0342970934 scopus 로고    scopus 로고
    • Surface-potential-based compact MOSFET Models
    • San Jose, California, May 1999 (published by the Fabless Semiconductor Association)
    • G. Gildenblat, "Surface-potential-based compact MOSFET Models." 1999 FSA Modeling Workshop, San Jose, California, May 1999 (published by the Fabless Semiconductor Association).
    • 1999 FSA Modeling Workshop
    • Gildenblat, G.1
  • 38
    • 0028386555 scopus 로고
    • MOSFET modeling for analog circuit CAD: Problems and prospects
    • Y. Tsividis and K. Suyama, "MOSFET modeling for analog circuit CAD: problems and prospects." IEEE J. Sol. St. Circ. SC-29, pp. 210-216, 1994.
    • (1994) IEEE J. Sol. St. Circ. , vol.SC-29 , pp. 210-216
    • Tsividis, Y.1    Suyama, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.