Nucleation and growth of epitaxial silicide in silicon nanowires

Materials Science and Engineering R: Reports

Volumn 70, Issue 3-6, 2010, Pages 112-125

  Chou, Yi Chia ^a   Lu, Kuo Chang ^b   Tu, K N ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Nucleation; Silicon nanowire; Transition metal silicides

Indexed keywords

CIRCUIT COMPONENTS; EPITAXIAL SILICIDES; FUNCTIONAL CIRCUITS; KINETICS OF NUCLEATION; METAL SILICIDE; METAL THIN FILM; NANO SCALE; NANOSCALE BUILDING BLOCKS; NANOSCALE METALS; NUCLEATION AND GROWTH; SALICIDES; SHALLOW JUNCTION; SI DEVICES; SI NANOWIRE; SILICIDE FORMATION; SILICIDE PHASE; SILICON NANOWIRE; SILICON NANOWIRES; SYSTEMATIC STUDY; TRANSITION-METAL SILICIDES;

BIOSENSORS; EPITAXIAL FILMS; FILM GROWTH; GROWTH KINETICS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOWIRES; NUCLEATION; OHMIC CONTACTS; SILICIDES; SILICON; SOLID STATE REACTIONS; TRANSITION METALS; VAPOR DEPOSITION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78649315830     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mser.2010.06.005     Document Type: Conference Paper

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