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Volumn 3, Issue 4, 2003, Pages 443-445

Nanoimprint lithography for hybrid plastic electronics

Author keywords

[No Author keywords available]

Indexed keywords

PLASTIC;

EID: 0141674950     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl034031e     Document Type: Article
Times cited : (149)

References (27)
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    • (1996) Science , vol.272 , pp. 85
    • Chou, S.Y.1    Krauss, P.R.2    Renstrom, P.J.3
  • 7
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    • Austin, M. D.; Chou, S. Y. Appl. Phys. Lett. 2002, 81, 4431. Moritz, J.; Dieny, B.; Nozieres, J. P.; Landis, S.; Lebib, A.; Chen, Y. J. Appl. Phys. 2002, 91, 7314. Chen, Y.; Williams, R. S. Nanoscale patterning for the formation of extensive wires. PCT International Patent Application, 2001.
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 4431
    • Austin, M.D.1    Chou, S.Y.2
  • 8
    • 0037095162 scopus 로고    scopus 로고
    • Austin, M. D.; Chou, S. Y. Appl. Phys. Lett. 2002, 81, 4431. Moritz, J.; Dieny, B.; Nozieres, J. P.; Landis, S.; Lebib, A.; Chen, Y. J. Appl. Phys. 2002, 91, 7314. Chen, Y.; Williams, R. S. Nanoscale patterning for the formation of extensive wires. PCT International Patent Application, 2001.
    • (2002) J. Appl. Phys. , vol.91 , pp. 7314
    • Moritz, J.1    Dieny, B.2    Nozieres, J.P.3    Landis, S.4    Lebib, A.5    Chen, Y.6
  • 9
    • 0037011629 scopus 로고    scopus 로고
    • Nanoscale patterning for the formation of extensive wires PCT International Patent Application, 2001
    • Austin, M. D.; Chou, S. Y. Appl. Phys. Lett. 2002, 81, 4431. Moritz, J.; Dieny, B.; Nozieres, J. P.; Landis, S.; Lebib, A.; Chen, Y. J. Appl. Phys. 2002, 91, 7314. Chen, Y.; Williams, R. S. Nanoscale patterning for the formation of extensive wires. PCT International Patent Application, 2001.
    • Chen, Y.1    Williams, R.S.2
  • 15
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    • note
    • 4 plasma at 100 W and 100 mTorr) followed by thermal deposition of 10 nm Cr and 50 nm Au. The polymer and metal were subsequently lifted off in Remover PG (MicroChem) at 80 °C.
  • 17
    • 0141470076 scopus 로고    scopus 로고
    • note
    • 2 was lifted off in acetone.
  • 23
    • 0141470046 scopus 로고    scopus 로고
    • note
    • 18 in a direction perpendicular to the gate features. Contacts to the SiNWs and gates were defined by electron beam lithography and subsequent electron beam deposition of 60 nm Pd and 50 nm Au.
  • 26
    • 0003975234 scopus 로고    scopus 로고
    • September
    • Lieber, C. M. Sci. Am. September, 2001, 58. Hu, J.; Odom, T. W.; Lieber, C. M. Acc. Chem. Res. 1999, 32, 435.
    • (2001) Sci. Am. , pp. 58
    • Lieber, C.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.