Growth of high-density titanium suicide nanowires in a single direction on a silicon surface

Nano Letters

Volumn 7, Issue 4, 2007, Pages 885-889

  Hsu, Hung Chang ^a   Wu, Wen Wei ^a   Hsu, N Feng ^b   Chen, Lih Juann ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CRYSTALLOGRAPHY; GROWTH (MATERIALS); TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

GROWTH MECHANISMS; SILICON SURFACES; TITANIUM DISILICIDE NANOWIRES;

NANOWIRES;

NANOMATERIAL; SILICATE; SILICON; TITANIUM; TITANIUM SILICIDE; UNCLASSIFIED DRUG;

ANISOTROPY; ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRICITY; INSTRUMENTATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

ANISOTROPY; CRYSTALLIZATION; ELECTRIC WIRING; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SILICATES; SILICON; SURFACE PROPERTIES; TITANIUM;

EID: 34248144859     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl062465e     Document Type: Article

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