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Volumn 312, Issue 23, 2010, Pages 3428-3433

Well width study of InGaN multiple quantum wells for bluegreen emitter

(10) Hoffmann, V a Netzel, C a Zeimer, U a Knauer, A a Einfeldt, S a Bertram, F c Christen, J c Weyers, M a Trnkle, G a Kneissl, M a,b

a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

c OTTO VON GUERICKE UNIVERSITY (Germany)

Author keywords

A1. High resolution X ray diffraction; A1. Segregation; A3. Low press; A3. Metal organic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting indium compounds

Indexed keywords

A1. SEGREGATION; A3. LOW PRESS; A3. METAL ORGANIC VAPOR PHASE EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING INDIUM COMPOUNDS; HIGH RESOLUTION X RAY DIFFRACTION;

DIFFRACTION; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; ORGANOMETALLICS; PRESSES (MACHINE TOOLS); SEGREGATION (METALLOGRAPHY); SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; VAPORS; X RAY DIFFRACTION; X RAYS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77958591600 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.09.013 Document Type: Article

Times cited : (10)

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