InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 79, Issue 16, 2001, Pages 2552-2554

  Gerthsen, D ^a   Neubauer, B ^a   Rosenauer, A ^a   Stephan, T ^a   Kalt, H ^a   Schon O ^b   Heuken, M ^b  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035886094     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1409949     Document Type: Article

References (12)

1. S. Nakamura, J. Mater. Res. 14, 2716 (1999).
2. O. Morikawa, T. Someya, K. Tachibana, S. Ishida, and Y. Arakawa, Appl. Phys. Lett. 76, 2361 (2000).
3. F. Della Sala, A. Di Carlo, P. Lugli, F. Bernardini, V. Fiorentini, R. Scholz, and J.-M. Jancu, Appl. Phys. Lett. 74, 2002 (1999).
4. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
5. I.-Hsiu Ho and G. B. Stringfellow, Appl. Phys. Lett. 69, 2701 (1996).
6. H. Lakner, Q. Liu, G. Brockt, A. Radefeld, A. Meinert, and F. Scholz, Mater. Sci. Eng., B 51, 44 (1998).
7. C. Kisielowski, Z. Liliental-Weber, and S. Nakamura, Jpn. J. Appl. Phys., Part 1 36, 6932 (1997).
8. D. Gerthsen, E. Hahn, B. Neubauer, A. Rosenauer, O. Schön, M. Heuken, and A. Rizzi, Phys. Status Solidi A 177, 145 (2000).
9. C. Wetzel, T. Takeuchi, S. Yamagucki, H. Katoh, H. Amano, and I. Akasaki, Appl. Phys. Lett. 73, 1994 (1998).
10. L. K. Teles, J. Furthmüler, L. M. R. Scolfaro, J. R. Leite, and F. Bechstedt, Phys. Rev. B 62, 2475 (2000).
11. H. Chen, R. M. Feenstra, J. Northrup, T. Zywitz, J. Neugebauer, and D. W. Grewe, Phys. Rev. Lett. 85, 1902 (2000).
12. More details on the determination of the piezoelectric fields in InGaN quantum wells will be given elsewhere.