Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy

Physica Status Solidi C: Conferences

Volumn 0, Issue 6 SPEC. ISS., 2003, Pages 1668-1683

  Gerthsen, D ^a   Hahn, E ^a   Neubauer, B ^a   Potin, V ^a   Rosenauer, A ^a   Schowalter, M ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; EXCITONS; HETEROJUNCTIONS; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; PHASE DIAGRAMS; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM DISTRIBUTION; STRAINED-LAYER STRUCTURES; SURFACE SEGREGATION; Z-CONTRAST IMAGING;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0842284767     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303129     Document Type: Conference Paper

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