Analysis of quantum efficiency of high brightness GaInN/GaN quantum wells

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2202-2205

  Lahmann, S ^a   Hitzel, F ^a   Rossow, U ^a   Hangleiter, A ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONFINEMENTS; EXCITONIC BINDING; HIGH-RESOLUTION X-RAY DIFFRACTION; INTERNAL QUANTUM EFFICIENCY; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; THERMAL ACTIVATION ENERGIES;

ACTIVATION ENERGY; NITRIDES; QUANTUM EFFICIENCY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 32944470027     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303497     Document Type: Conference Paper

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