Accurate modelling of InGaN quantum wells

Optical and Quantum Electronics

Volumn 38, Issue 12-14, 2006, Pages 953-961

  Wenzel, Hans ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

GaN; InGaN quantum wells; Piezoelectric polarisation; Semiconductor lasers

Indexed keywords

GAIN SPECTRA; INGAN QUANTUM WELLS; PIEZOELECTRIC POLARISATION;

BAND STRUCTURE; LUMINESCENCE; OPTICAL TRANSITIONS; POISSON EQUATION; POLARIZATION; SCHRODINGER EQUATION; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33947282689     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-006-9031-y     Document Type: Conference Paper

References (14)

1. Chow, W., Kira, M., Koch, S.W. Phys. Rev. B 60 1947, 1999.
2. Christmas, U.M.E., Andreev, A.D., Faux, D.A.: J. Appl. Phys. 98 073522, 2005.
3. Chuang, S.L., Chang, C.S.: Phys. Rev. 554 2491, 1996.
4. Enders, P., Bärwolff, A., Woerner, M., Suisky, D.: Phys. Rev. B 51 16695, 1995.
5. Flory, C.A., Hasnain, G.: IEEE J. Quantum Electron. 37 244, 2001.
6. Harris, J.C., Kako, S., Someya, T., Arakawa, Y.: Phys. Slat. Sol. B 216 423, 1999.
7. Kollmer, H., Im, J.S., Heppel, S., Off, J., Scholz, F., Hangleiter, A.: Appl. Phys. Lett. 74 82, 1999.
8. Mayrock, O.,Wünsche, H.J., Henneberger, F. Phys. Rev. B 62 16870, 2000.
9. Pacelli, A.: IEEE Tran. Electron Devices 44 1169, 1997.
10. Piprek, J., Farrell, R., DenBaars, S., Nakamura, S.: IEEE Photon. Techn. Lett. 18 7, 2006.
11. Sirenko, Y.M., Jeon, J.B., Lee, B.C., Kim, K.W, Littlejohn, M.A., Stroscio, M.A., Iafrate, G.J.: Phys. Rev. B 55 4360, 1997.
12. Szmulowicz, F.: Phys. Rev. B 51 1613, 1995.
13. Trellakis, A., Galick, A.T., Pacelli, A., Ravaioli U.: J. Appl. Phys. 81 7880, 1997.
14. Zimmermann, R.: Many-Particle Theory of Highly excited Semiconductors, Vol.18 of Teubner-Texte zur Physik. Teubner, Leipzig, 1987.