Optical and structural properties of In 0.08GaN/In 0.02GaN multiple quantum wells grown at different temperatures and with different indium supplies

Journal of Electronic Materials

Volumn 39, Issue 6, 2010, Pages 677-683

  Zeimer, U ^a   Jahn, U ^b   Hoffmann, V ^a   Weyers, M ^a   Kneissl, M ^a,c  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Cathodoluminescence; Defects; Dislocations; InGaN; Optical properties; Quantum wells

Indexed keywords

GROWTH CONDITIONS; HIGH RESOLUTION; INGAN; INGAN QUANTUM WELLS; INHOMOGENEITIES; LAYER THICKNESS; MOLE FRACTION; MULTIPLE QUANTUM WELLS; NON-RADIATIVE RECOMBINATIONS; QUANTUM WELL; SAMPLE SURFACE; SECONDARY-ELECTRON IMAGE; THREADING DISLOCATION;

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; DEFECTS; ELECTRON OPTICS; GALLIUM NITRIDE; INDIUM; OPTICAL PROPERTIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77954622859     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1159-7     Document Type: Article

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