Synthesis and optical properties of amorphous Si3N 4- xPx dielectrics and complementary insights from ab initio structural simulations

Chemistry of Materials

Volumn 22, Issue 18, 2010, Pages 5296-5305

  Tice, J B ^a   D'Costa, V R ^a   Grzybowski, Gordon ^a   Chizmeshya, A V G ^a   Tolle, J ^a   Menendez, J ^a   Kouvetakis, J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; AIR STABLE; ALTERNATIVE ROUTES; AMORPHOUS DIELECTRICS; AMORPHOUS SI; BAND GAPS; COMPOSITIONAL TUNING; GROUND-STATE STRUCTURES; H-BONDS; LOCAL BONDING; MOLECULAR CORE; MOLECULAR GEOMETRIES; NEAR STOICHIOMETRIC; NONSTOICHIOMETRIC; OPTICAL RESPONSE; PLANAR GEOMETRIES; PLANARIZATION; PRECISE CONTROL; ROBUST MATERIALS; SI WAFER; SILICON OXYNITRIDES; STRUCTURAL SIMULATIONS;

DENSITY FUNCTIONAL THEORY; ENERGY GAP; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; SILICON NITRIDE; SILICON WAFERS; SPECTROSCOPIC ELLIPSOMETRY; TUNING;

AMORPHOUS SILICON;

EID: 77957082224     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm101448a     Document Type: Article

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