Surface segregation of arsenic and phosphorus from buried layers during Si molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2229-2232

  Hobart, K D ^a   Kub, F J ^a   Jernigan, G G ^a,b   Thompson, P E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b ASEE ^*

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002208646     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

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7. Spreading resistance profiling is an industry-accepted epitaxial film characterization technique. The profiling for this work was performed by Solecon Laboratories, Inc, San Jose, CA. The following citations should be referenced: R. G. Mazur and R. H. Dickey, J. Electrochem. Soc. 113, 255 (1966); 1984 Annual Book of ASTM Standards (1984), F525-84, Vol. 10.05, p. 455.
8. Spreading resistance profiling is an industry-accepted epitaxial film characterization technique. The profiling for this work was performed by Solecon Laboratories, Inc, San Jose, CA. The following citations should be referenced: R. G. Mazur and R. H. Dickey, J. Electrochem. Soc. 113, 255 (1966); 1984 Annual Book of ASTM Standards (1984), F525-84, Vol. 10.05, p. 455.
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10. Handbook of X-ray Photoelectron Spectroscopy, edited by G. E. Muilenberg (Perkin-Elmer, Eden Prairie, MN, 1979), p. 188.
11. K. D. Hobart, F. J. Kub, N. A. Papanicolaou, W. Kruppa, and P. E. Thompson, IEEE Electron. Device Lett. 16, 205 (1995).
12. A. L. Alstrin, P. G. Strupp, and J. R. Leone, Appl. Phys. Lett. 63, 815 (1993).