Precursors for group IV epitaxy for micro/opto-electronic applications

Solid State Technology

Volumn 52, Issue 4, 2009, Pages 12-15

  Thomas, Shawn G ^a   Bauer, Matthias ^a   Stephens, Matthew ^b,d   Kouvetakis, John ^c  

^a ASM AMERICA   (United States)

^b Voltaix LLC   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

^d ASM America ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL PRECURSORS; ELECTRONIC APPLICATION; EPITAXIAL DEPOSITION; MATERIAL SCIENTISTS; MATERIALS SCIENTIST; NEW MATERIAL; NON-TRADITIONAL; THERMAL BUDGET;

CRYSTAL GROWTH; GERMANIUM;

TURNING;

EID: 66249109923     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (8)

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2. H.S. Yang et al., "Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing," IEEE Int Elect. Dev. Mtg, 2004. p. 1075.
3. M. Horstmann et al., "Integration and optimization of embedded-sige, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies," IEEE Int Elect. Dev. Mtg, 2005. p. 233.
4. P. Morin et al., "Mechanisms of stress generation within a polysilicon gate for nMOSFET performance enhancement," Materials Science and Engineering: B, vol. 135, no. 3, 2006. p. 215.
5. M. Bauer et al., "Si:CP Selective Epitaxial Growth in Recessed Source/Drain Regions yielding to Drive Current Enhancement in n-channel MOSFE" ECS Transactions, vol. 16, no. 10, 2008. p. 1001.
6. Y-Y. Fang et al., "Epitaxy driven synthesis of elemental Ge/Si strain-engineered materials and device structures via designer molecular chemistry" Chem. Mater. Vol. 19, 2007. p. 5910.
7. K. Chilukuri et al., "Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES)," Semicond. Sci. Tech-nol. 22, 2007. p. 29-34.
8. S.G. Thomas, et al., "Fabrication and Characterization of InGaP/GaAs Het-erojunction Bipolar Transistors on Germanium on Insulator (GOI) Substrates," IEEE Elect. Dev. Lett., vol. 26, no. 7, 2005. p. 438.