Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation

Applied Physics Letters

Volumn 87, Issue 7, 2005, Pages

  Trivedi, R A ^a   Tolle, J ^a   Chizmeshya, A V G ^a   Roucka, R ^a   Ritter, Cole ^a   Kouvetakis, J ^a   Tsong, I S T ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAS-SOURCE; GROWTH PROCESS; SINGLE PEAK; SUBSTRATE SURFACE;

DECOMPOSITION; EPITAXIAL GROWTH; FILM GROWTH; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SILICON; TEMPERATURE DISTRIBUTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 24144493032     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2012519     Document Type: Article

References (9)

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