Novel methods for CVD of Ge4C and (Ge4C)(x)Si(y) diamond-like semiconductor heterostructures: Synthetic pathways and structures of trigermyl-(GeH3)3CH and tetragermyl-(GeH3)4C methanes

Journal of the American Chemical Society

Volumn 120, Issue 27, 1998, Pages 6738-6744

  Kouvetakis, J ^a   Haaland, Arne ^b   Shorokhov, Dmitry J ^b   Volden, Hans Vidar ^b   Girichev, Georgii V ^c   Sokolov, Vasili I ^c   Matsunaga, Phillip ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF OSLO   (Norway)

^c IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DEHYDROGENATION; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; MATHEMATICAL MODELS; METHANE; MOLECULAR SPECTROSCOPY; MOLECULAR STRUCTURE; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON WAFERS; SURFACES;

BAND GAP; HETEROEPITAXIAL GROWTH; THERMAL DEHYDROGENATION;

HETEROJUNCTIONS;

ORGANOGERMANIUM COMPOUND;

ARTICLE; CHEMICAL STRUCTURE; DRUG STRUCTURE; DRUG SYNTHESIS; ELECTRON DIFFRACTION; MASS SPECTROMETRY; REACTION ANALYSIS; SEMICONDUCTOR;

EID: 0032527745     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja9810033     Document Type: Article

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