메뉴 건너뛰기




Volumn 95, Issue 18, 2009, Pages

Direct integration of active Ge1-x (Si4 Sn)x semiconductors on Si(100)

Author keywords

[No Author keywords available]

Indexed keywords

CELL DIMENSIONS; DEPOSITION CHEMISTRY; DIRECT INTEGRATION; FIRST-PRINCIPLES CALCULATION; IN-PLANE LATTICES; MIXING ENTROPY; OPTICAL AND ELECTRICAL PROPERTIES; SI(1 0 0); STRAIN-FREE; TETRAGONAL STRUCTURE;

EID: 71049122454     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3242002     Document Type: Article
Times cited : (39)

References (8)
  • 3
  • 5
    • 34247478535 scopus 로고    scopus 로고
    • New classes of Si-based photonic materials and device architectures via designer molecular routes
    • DOI 10.1039/b618416b
    • J. Kouvetakis and A. V. G. Chizmeshya, J. Mater. Chem. 0959-9428 17, 1649 (2007). 10.1039/b618416b (Pubitemid 46646856)
    • (2007) Journal of Materials Chemistry , vol.17 , Issue.17 , pp. 1649-1655
    • Kouvetakis, J.1    Chizmeshya, A.V.G.2
  • 7
    • 34547270635 scopus 로고    scopus 로고
    • Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions
    • DOI 10.1063/1.2749844
    • G. Sun, H. H. Cheng, J. Menendez, J. B. Khurgin, and R. A. Soref, Appl. Phys. Lett. 0003-6951 90, 251105 (2007). 10.1063/1.2749844 (Pubitemid 47141170)
    • (2007) Applied Physics Letters , vol.90 , Issue.25 , pp. 251105
    • Sun, G.1    Cheng, H.H.2    Menendez, J.3    Khurgin, J.B.4    Soref, R.A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.