ClnH6-nSiGe compounds for CMOS compatible semiconductor applications: Synthesis and fundamental studies

Journal of the American Chemical Society

Volumn 129, Issue 25, 2007, Pages 7950-7960

  Tice, Jesse B ^a   Chizmeshya, Andrew V G ^a   Roucka, Radek ^a   Tolle, John ^a   Cherry, Brian R ^a   Kouvetakis, John ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINATION; CMOS INTEGRATED CIRCUITS; DEFECT DENSITY; HYDRIDES; MICROSTRUCTURE; REACTION KINETICS; SURFACE MORPHOLOGY;

MONOCRYSTALLINE MICROSTRUCTURES; POLYCHLORINATED DERIVATIVES; STRAIN PROPERTIES;

SILICON COMPOUNDS;

CHLORINE; GERMANIUM; HYDROGEN; SILICON;

ARTICLE; CHEMICAL REACTION; CHEMICAL STRUCTURE; CHLORINATION; CRYSTAL STRUCTURE; DENSITY; DENSITY FUNCTIONAL THEORY; DERIVATIZATION; GROWTH; INFRARED SPECTROSCOPY; KINETICS; LOW TEMPERATURE; MASS SPECTROMETRY; MORPHOLOGY; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; QUANTUM YIELD; REACTION ANALYSIS; SEMICONDUCTOR; STOICHIOMETRY; STRUCTURE ANALYSIS; SYNTHESIS; THERMAL ANALYSIS; VIBRATION;

EID: 34347262585     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja0713680     Document Type: Article

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