New insight into the TDDB and post breakdown reliability of novel high-κ gate dielectric stacks

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 354-363

  Pey, K L ^a   Raghavan, N ^a   Li, X ^a,b   Liu, W H ^a   Shubhakar, K ^a   Wu, X ^a   Bosman, M ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Breakdown recovery; Grain boundary; High dielectric; Interfacial layer; Metal gate; Post breakdown; Random telegraph noise (RTN); Time dependent dielectric breakdown (TDDB)

Indexed keywords

BREAKDOWN RECOVERY; INTERFACIAL LAYER; METAL GATE; POST BREAKDOWN; RANDOM TELEGRAPH NOISE; TIME DEPENDENT DIELECTRIC BREAKDOWN;

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; GATE DIELECTRICS; GATES (TRANSISTOR); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; LOGIC DEVICES; METAL RECOVERY; METALLIC COMPOUNDS; MODELS; OXIDE FILMS; POLYSILICON; QUALITY ASSURANCE; RELIABILITY ANALYSIS; SILICON COMPOUNDS; SILICON OXIDES; TELEGRAPH; TRANSITION METALS;

FAILURE ANALYSIS;

EID: 77957913957     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488805     Document Type: Conference Paper

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