A novel methodology for sensing the breakdown location and its application to the reliability study of ultrathin Hf-silicate gate dielectrics

IEEE Transactions on Electron Devices

Volumn 52, Issue 8, 2005, Pages 1759-1765

  Crupi, Felice ^a   Kauerauf, Thomas ^b,c   Degraeve, Robin ^b   Pantisano, Luigi ^b   Groeseneken, Guido ^b,c  

^a UNIVERSITY OF CALABRIA   (Italy)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

CMOS reliability; Dielectrics breakdown; High dielectrics

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); MOSFET DEVICES; PERMITTIVITY; RELIABILITY;

CMOS RELIABILITY; DIELECTRICS BREAKDOWN;

ELECTRIC BREAKDOWN;

EID: 23444437630     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.852544     Document Type: Article

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