-
1
-
-
27144497062
-
Abrupt breakdown in dielectric/metal gate stacks: A potential reliability limitation?
-
DOI 10.1109/LED.2005.856015
-
T. Kauerauf, R. Degraeve, M. B. Zahid, M. Cho, B. Kaczer, Ph. Roussel, G. Groeseneken, H. Maes, and S. De Gendt, IEEE Electron Device Lett. 0741-3106 26, 773 (2005). 10.1109/LED.2005.856015 (Pubitemid 41488897)
-
(2005)
IEEE Electron Device Letters
, vol.26
, Issue.10
, pp. 773-775
-
-
Kauerauf, T.1
Degraeve, R.2
Zahid, M.B.3
Cho, M.4
Kaczer, B.5
Roussel, Ph.6
Groeseneken, G.7
Maes, H.8
De Gendt, S.9
-
2
-
-
84932141532
-
-
F. Palumbo, S. Lombardo, J. H. Stathis, V. Narayanan, F. R. McFeely, and J. J. Yurkas, Proceedings of the International Reliability Physics Symposium, 2004, p. 122.
-
(2004)
Proceedings of the International Reliability Physics Symposium
, pp. 122
-
-
Palumbo, F.1
Lombardo, S.2
Stathis, J.H.3
Narayanan, V.4
McFeely, F.R.5
Yurkas, J.J.6
-
3
-
-
74549223156
-
-
R. Ranjan, K. L. Pey, C. H. Tung, D. S. Ang, L. J. Tang, T. Kauerauf, R. Degraeve, G. Groeseneken, S. De Gendt, and L. K. Bera, Proceedings of the IEEE IEDM Tech. Dig., 2006, p. 759.
-
(2006)
Proceedings of the IEEE IEDM Tech. Dig.
, pp. 759
-
-
Ranjan, R.1
Pey, K.L.2
Tung, C.H.3
Ang, D.S.4
Tang, L.J.5
Kauerauf, T.6
Degraeve, R.7
Groeseneken, G.8
De Gendt, S.9
Bera, L.K.10
-
4
-
-
33645518259
-
-
0003-6951. 10.1063/1.2186969
-
R. Ranjan, K. L. Pey, C. H. Tung, D. S. Ang, L. J. Tang, T. Kauerauf, R. Degraeve, G. Groeseneken, S. De Gendt, and L. K. Bera, Appl. Phys. Lett. 0003-6951 88, 122907 (2006). 10.1063/1.2186969
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 122907
-
-
Ranjan, R.1
Pey, K.L.2
Tung, C.H.3
Ang, D.S.4
Tang, L.J.5
Kauerauf, T.6
Degraeve, R.7
Groeseneken, G.8
De Gendt, S.9
Bera, L.K.10
-
6
-
-
50249122653
-
-
0163-1918.
-
V. L. Lo, K. L. Pey, C. H. Tung, and X. Li, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007 497.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2007
, pp. 497
-
-
Lo, V.L.1
Pey, K.L.2
Tung, C.H.3
Li, X.4
-
7
-
-
59949096250
-
-
R. Degraeve, B. Kaczer, A. D. Keersgeiter, and G. Groeseneken, Proceedings of the International Reliability Physics Symposium, 2001, p. 360-366.
-
(2001)
Proceedings of the International Reliability Physics Symposium
, pp. 360-366
-
-
Degraeve, R.1
Kaczer, B.2
Keersgeiter, A.D.3
Groeseneken, G.4
-
8
-
-
19944412496
-
Investigating physical and chemical changes in high-k gate stacks using nanoanalytical electron microscopy
-
DOI 10.1016/j.mee.2005.04.048, PII S0167931705001875, 14th Biennial Conference on Insulating Films on Semiconductors
-
A. J. Craven, M. MacKenzie, D. W. McComb, and F. T. Docherty, Microelectron. Eng. 0167-9317 80, 90 (2005). 10.1016/j.mee.2005.04.048 (Pubitemid 40753055)
-
(2005)
Microelectronic Engineering
, vol.80
, Issue.SUPPL.
, pp. 90-97
-
-
Craven, A.J.1
MacKenzie, M.2
McComb, D.W.3
Docherty, F.T.4
-
9
-
-
0001537609
-
-
0021-8979. 10.1063/1.368327
-
J. P. Dekker and A. Lodder, J. Appl. Phys. 0021-8979 84, 1958 (1998). 10.1063/1.368327
-
(1998)
J. Appl. Phys.
, vol.84
, pp. 1958
-
-
Dekker, J.P.1
Lodder, A.2
-
10
-
-
77952345030
-
-
NVMTS
-
R. Meyer, L. Schloss, J. Brewer, R. Lambertson, W. Kinney, J. Sanchez, and D. Rinerson, Proceedings of the 9th Annual Non-Volatile Memory Technology Symposium, NVMTS, 2008, p. 1-5.
-
(2008)
Proceedings of the 9th Annual Non-Volatile Memory Technology Symposium
, pp. 1-5
-
-
Meyer, R.1
Schloss, L.2
Brewer, J.3
Lambertson, R.4
Kinney, W.5
Sanchez, J.6
Rinerson, D.7
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