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Volumn 96, Issue 2, 2010, Pages

Direct visualization and in-depth physical study of metal filament formation in percolated high- κ dielectrics

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT VISUALIZATION; GATE ELECTRODES; GATE STACKS; HIGH CURRENTS; METAL FILAMENTS; NANOSCALE METALS; PHYSICAL DEFECTS; RELIABILITY MARGIN; TRANSMISSION ELECTRON; ULTRA-FAST;

EID: 74549193388     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3291621     Document Type: Article
Times cited : (35)

References (10)
  • 8
    • 19944412496 scopus 로고    scopus 로고
    • Investigating physical and chemical changes in high-k gate stacks using nanoanalytical electron microscopy
    • DOI 10.1016/j.mee.2005.04.048, PII S0167931705001875, 14th Biennial Conference on Insulating Films on Semiconductors
    • A. J. Craven, M. MacKenzie, D. W. McComb, and F. T. Docherty, Microelectron. Eng. 0167-9317 80, 90 (2005). 10.1016/j.mee.2005.04.048 (Pubitemid 40753055)
    • (2005) Microelectronic Engineering , vol.80 , Issue.SUPPL. , pp. 90-97
    • Craven, A.J.1    MacKenzie, M.2    McComb, D.W.3    Docherty, F.T.4
  • 9
    • 0001537609 scopus 로고    scopus 로고
    • 0021-8979. 10.1063/1.368327
    • J. P. Dekker and A. Lodder, J. Appl. Phys. 0021-8979 84, 1958 (1998). 10.1063/1.368327
    • (1998) J. Appl. Phys. , vol.84 , pp. 1958
    • Dekker, J.P.1    Lodder, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.