SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 95, Issue 22, 2009, Pages

Detection of high- κ and interfacial layer breakdown using the tunneling mechanism in a dual layer dielectric stack

(3) Raghavan, N a Pey, K L a Li, X a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; DIELECTRIC STACK; DUAL LAYER; ELECTRICAL TESTS; GATE STACKS; INTERFACIAL LAYER; SILICON OXYNITRIDES; SILICON SUBSTRATES; TIME DEPENDENT DIELECTRIC BREAKDOWN; TUNNELING CURRENT; TUNNELING MECHANISM; WEIBULL SLOPE;

GATE DIELECTRICS; GATES (TRANSISTOR); SILICON NITRIDE; SILICON OXIDES; TUNNELING (EXCAVATION); WIND TUNNELS;

DIELECTRIC MATERIALS;

EID: 71949117039 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3269589 Document Type: Article

Times cited : (17)

References (16)

1
- 85059712075
- (Institute of Physics, London)
- M. Houssa, High-K Gate Dielectrics (Institute of Physics, London, 2003).
- (2003) High-K Gate Dielectrics
- Houssa, M.¹

2
- 59349106857
- 0167-9317. 10.1016/j.mee.2008.09.024
- C. D. Young, G. Bersuker, J. Tun, R. Choi, D. Heh, and B. H. Lee, Microelectron. Eng. 0167-9317 86, 287 (2009). 10.1016/j.mee.2008.09.024
- (2009) Microelectron. Eng. , vol.86 , pp. 287
- Young, C.D.¹ Bersuker, G.² Tun, J.³ Choi, R.⁴ Heh, D.⁵ Lee, B.H.⁶

3
- 59949102909
- 1071-1023. 10.1116/1.3077185
- M. Rafik, G. Ribes, D. Roy, and G. Ghibaudd, J. Vac. Sci. Technol. B 1071-1023 27, 472 (2009). 10.1116/1.3077185
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 472
- Rafik, M.¹ Ribes, G.² Roy, D.³ Ghibaudd, G.⁴

4
- 33745723252
- (IEEE, Washington)
- R. Degraeve, T. Kauerauf, M. Cho, M. Zahid, L. -Å. Ragnarsson, D. P. Brunco, B. Kaczer, Ph. Roussel, S. De Gendt, and G. Groeseneken, Proceedings of the IEEE International Electron Device Meeting, (IEEE, Washington, 2005), p. 408.
- (2005) Proceedings of the IEEE International Electron Device Meeting , pp. 408
- Degraeve, R.¹ Kauerauf, T.² Cho, M.³ Zahid, M.⁴ Ragnarsson, L.-Å.⁵ Brunco, D.P.⁶ Kaczer, B.⁷ Roussel, Ph.⁸ De Gendt, S.⁹ Groeseneken, G.¹⁰

5
- 0000338747
- (IEEE, New York)
- A. Berman, Proceedings of the International Reliability Physics Symposium, (IEEE, New York, 1981), p. 204.
- (1981) Proceedings of the International Reliability Physics Symposium , pp. 204
- Berman, A.¹

6
- 58149236521
- 0003-6951. 10.1063/1.3056659
- X. Li, C. H. Tung, and K. L. Pey, Appl. Phys. Lett. 0003-6951 93, 262902 (2008). 10.1063/1.3056659
- (2008) Appl. Phys. Lett. , vol.93 , pp. 262902
- Li, X.¹ Tung, C.H.² Pey, K.L.³

7
- 31044455312
- High dielectric constant gate oxides for metal oxide Si transistors
- DOI 10.1088/0034-4885/69/2/R02, PII S0034488506721856
- J. Robertson, Rep. Prog. Phys. 0034-4885 69, 327 (2006). 10.1088/0034-4885/69/2/R02 (Pubitemid 43121643)
- (2006) Reports on Progress in Physics , vol.69 , Issue.2 , pp. 327-396
- Robertson, J.¹

8
- 67650418339
- 1530-4388. 10.1109/TDMR.2009.2016954
- A. Kerber and E. A. Cartier, IEEE Trans. Device Mater. Reliab. 1530-4388 9, 147 (2009). 10.1109/TDMR.2009.2016954
- (2009) IEEE Trans. Device Mater. Reliab. , vol.9 , pp. 147
- Kerber, A.¹ Cartier, E.A.²

9
- 3142679897
- Prentice-Hall, see
- B. V. Zeghbroeck, Principles of Semiconductor Devices, Prentice-Hall, 2006, see http://ecee.colorado.edu/∼bart/book/.
- (2006) Principles of Semiconductor Devices
- Zeghbroeck, B.V.¹

10
- 0035248925
- Model of the stress induced leakage current in gate oxides
- DOI 10.1109/16.902728
- L. Larcher, A. Paccagnella, and G. Ghidini, IEEE Trans. Electron Devices 0018-9383 48, 285 (2001). 10.1109/16.902728 (Pubitemid 32254551)
- (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.2 , pp. 285-288
- Larcher, L.¹ Paccagnella, A.² Ghidini, G.³

11
- 0032594729
- 0268-1242. 10.1088/0268-1242/14/10/302
- M. Houssa, P. W. Mertens, and M. M. Heyns, Semicond. Sci. Technol. 0268-1242 14, 892 (1999). 10.1088/0268-1242/14/10/302
- (1999) Semicond. Sci. Technol. , vol.14 , pp. 892
- Houssa, M.¹ Mertens, P.W.² Heyns, M.M.³

12
- 31744439912
- (Springer, Berlin)
- H. R. Huff and D. C. Gilmer, High dielectric constant materials-VLSI MOSFET Applications (Springer, Berlin, 2005).
- (2005) High Dielectric Constant Materials-VLSI MOSFET Applications
- Huff, H.R.¹ Gilmer, D.C.²

13
- 34548744634
- (IEEE, Phoenix)
- A. T. Krishnan and P. E. Nicollian, Proceedings of the International Reliability Physics Symposium (IEEE, Phoenix, 2007), p. 232.
- (2007) Proceedings of the International Reliability Physics Symposium , pp. 232
- Krishnan, A.T.¹ Nicollian, P.E.²

14
- 21644457127
- (IEEE, San Francisco)
- R. Ranjan, K. L. Pey, C. H. Tung, L. J. Tang, G. Groeseneken, L. K. Bera, and S. De Gendt, Proceedings of the IEEE International Electron Device Meeting (IEEE, San Francisco, 2004), p. 725.
- (2004) Proceedings of the IEEE International Electron Device Meeting , pp. 725
- Ranjan, R.¹ Pey, K.L.² Tung, C.H.³ Tang, L.J.⁴ Groeseneken, G.⁵ Bera, L.K.⁶ De Gendt, S.⁷

15
- 34548482219
- Bilayer gate dielectric study by scanning tunneling microscopy
- DOI 10.1063/1.2780084
- Y. C. Ong, D. S. Ang, K. L. Pey, S. J. O'Shea, K. E. J. Goh, C. Troadec, and C. H. Tung, Appl. Phys. Lett. 0003-6951 91, 102905 (2007). 10.1063/1.2780084 (Pubitemid 47379051)
- (2007) Applied Physics Letters , vol.91 , Issue.10 , pp. 102905
- Ong, Y.C.¹ Ang, D.S.² Pey, K.L.³ O'Shea, S.J.⁴ Goh, K.E.J.⁵ Troadec, C.⁶ Tung, C.H.⁷ Kawanago, T.⁸ Kakushima, K.⁹ Iwai, H.¹⁰

16
- 33646865327
- Charge trapping and dielectric relaxation in connection with breakdown of high-k gate dielectric stacks
- DOI 10.1063/1.2203942
- W. Luo, T. Yuan, Y. Kuo, J. Lu, J. Yan, and W. Kuo, Appl. Phys. Lett. 0003-6951 88, 202904 (2006). 10.1063/1.2203942 (Pubitemid 43781801)
- (2006) Applied Physics Letters , vol.88 , Issue.20 , pp. 202904
- Luo, W.¹ Yuan, T.² Kuo, Y.³ Lu, J.⁴ Yan, J.⁵ Kuo, W.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.