A surge current stable and avalanche rugged SiC merged pn Schottky diode blocking 600V especially suited for PFC applications

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1155-1158

  Treu, M ^a   Rupp, R ^b   Tai, C S ^c   Blaschitz, P ^a   Hilsenbeck, J ^a   Brunner, H ^a   Peters, D ^d   Elpelt, R ^d   Reimann, T ^e  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c Infineon Technologies Malaysia Sdn Bhd   (Malaysia)

^d SiCED Electronics Development GmbH and Co KG   (Germany)

^e ISLE GmbH   (Germany)

Author keywords

Avalanche; Pn diode; Power factor correction; Schottky diode; Surge current

Indexed keywords

CURRENT DENSITY; SILICON CARBIDE;

POWER FACTOR CORRECTION; SURGE CURRENT;

SCHOTTKY BARRIER DIODES;

EID: 34447273157     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1155     Document Type: Conference Paper

References (3)

1. M. Treu, R. Rupp, H. Brunner, F. Dahlquist, and Ch. Hecht: Proceedings of the ICSCRM2003. Material Science Forum Vols. 457-460 (2004). p. 981
2. I. Zverev, H. Kapels, R. Rupp and M. Herfurth: PCIM 2002 Proceeding, Nuremberg, Germany, May 14-16, 2002
3. D. Peters. P. Friedrichs, R. Schörner. and D. Stephani: Proceedings of the ICSCRM2001. Material Science Forum Vols. 389-393 (2002), p. 1125