Surge current ruggedness of silicon carbide Schottky- and merged-pin-Schottky diodes

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2008, Pages 245-248

  Heinze, Birk ^a   Lutz, Josef ^a   Neumeister, Matthias ^b   Rupp, Roland ^c   Holz, Matthias ^c  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b SIEMENS AG   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DIODES; ELECTRIC CONDUCTIVITY; MAGNETOPLASMA; MECHANISMS; MELTING POINT; MERGERS AND ACQUISITIONS; METALLIZING; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON; SILICON CARBIDE; THERMOCHEMISTRY;

SURGE-CURRENT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 51549093562     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2008.4538944     Document Type: Conference Paper

References (5)

1. J.M.Hancock, "SiC device applications: identifying and developing commercial applications", Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
2. nd generation 600V SiC Schottky diodes use merged pn/Schottky structure for surge overload protection", Proceedings of the APEC 2006
3. R. Singh, S.-H. Ryu, J.W. Palmour, A.R. Hefner, J. Lai, "1500V, 4Amp 4H-SiC JBS Diodes", Proceedings of the ISPSD 2000
4. Advanced TCAD Manual, Synopsys Inc., 2007, http://www.synopsys.com
5. Th. Hunger, O. Schilling, F. Wolter, "Numerical and Experimental Study on Surge Current Capability of Power Diodes", Proceedings of the PCIM, 2007