Reliability aspects of high voltage 4H-SiC JBS diodes

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 935-938

  Brosselard, Pierre ^a   Camara, Nicolas ^a   Jordà, Xavier ^a   Vellvehi, Miquel ^a   Bano, Edwige ^b   Millán, José ^a   Godignon, Philippe ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IMEP LAHC   (France)

Author keywords

4H silicon carbide; Basal plane dislocation; Junction Barrier Schottky diode; Stacking Faults formation

Indexed keywords

HVDC POWER TRANSMISSION; POWER SEMICONDUCTOR DIODES; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

4H SILICON CARBIDE; BASAL PLANE DISLOCATION; BASAL PLANES; BASAL-PLANES; DC STRESS; FORWARD MODE; HIGH-VOLTAGES; JUNCTION BARRIER SCHOTTKY DIODES; PLANE DISLOCATION; STACKING FAULT FORMATION;

STACKING FAULTS;

EID: 63849343936     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.935     Document Type: Conference Paper

References (5)

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