Evolution of drift-free, high power 4H-SiC PiN diodes

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1329-1334

  Das, Mrinal K ^a   Sumakeris, Joseph J ^a   Hull, Brett A ^a   Richmond, Jim ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Basal plane dislocations; Bipolar power devices; PiN diode; VF drift

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; BLOCKING PROBABILITY; DISLOCATIONS (CRYSTALS); SILICON CARBIDE; VOLTAGE CONTROL;

BASAL PLANE DISLOCATIONS; BIPOLAR POWER DEVICES; HIGH POWER DIODES; PIN DIODES;

SEMICONDUCTOR DIODES;

EID: 37849007098     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1329     Document Type: Conference Paper

References (8)

1. M.K. Das, Latest Advances in 4H-SiC PiN and MOS Power Devices (International Semiconductor Device Research Symposium, Washington, DC, December 2003).
2. M.K. Das, et al.: Proceedings of the 17th International Symposium on Power Semiconductor Devices and ICs, (2005), p. 299.
3. H. Lendenmann, et al.: Mater. Sci. Forum, 389-393 (2002), pp. 1259-1264.
4. J.J. Sumakeris, et al., U.S. Patent 6,849,874 filed Oct. 26, 2001.
5. Y.I. Bogdanov, et al.: Russian Microelectronics, 32 (2003), p. 51.
6. S. Ha, et al.: J. Cryst. Growth 244 (2002), p. 257.
7. f Drift in SiC Bipolar Power Devices (International Conference on Silicon Carbide and Related Materials, Pittsburgh, PA, September 2005,), these Proceedings.
8. B.A. Hull, et al.: High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications (International Conference on Silicon Carbide and Related Materials, Pittsburgh, PA, September 2005), these Proceedings.