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Materials Science Forum

Volumn 338, Issue , 2000, Pages

Reliability and degradation of metal-oxide-semiconductor capacitors on 4H- and 6H-silicon carbide

(7) Treu, M a Schorner R a Friedrichs, P a Rupp, R a Wiedenhofer, A a Stephani, D a Ryssel, H b,c

a SIEMENS AG (Germany)

b FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS (Germany)

c UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; IMPACT IONIZATION; RELIABILITY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; STRESSES;

CHARGE TRAPPING;

MOS CAPACITORS;

EID: 18844467377 PISSN: 02555476 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Article

Times cited : (4)

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