Influence of overgrown micropipes in the active area of SiC Schottky diodes on long term reliability

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 925-928

  Rupp, R ^a   Treu, M ^a   Turkes P ^a   Beermann, H ^a   Scherg, T ^a   Preis, H ^a   Cerva, H ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

Degradation mechanism; Device reliability; Overgrown micropipes

Indexed keywords

DEGRADATION; ENERGY DISSIPATION; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

DEGRADATION MECHANISM; DESTRUCTIVE BURNT SPOTS; DEVICE RELIABILITY; OVERGROWN MICROPIPES;

MICROSYSTEMS;

EID: 35148815699     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.925     Document Type: Conference Paper

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