Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide

Journal of Applied Physics

Volumn 84, Issue 5, 1998, Pages 2943-2948

  Treu, M ^a   Burte, E P ^a   Schorner R ^b   Friedrichs, P ^b   Stephani, D ^b   Ryssel, H ^a,c  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b SIEMENS AG   (Germany)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001285051     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368399     Document Type: Article

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