Reliability of SiC power devices against cosmic radiation-induced failure

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 851-856

  Soelkner, Gerald ^a   Kaindl, Winfried ^a   Treu, Michael ^b   Peters, Dethard ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^c SiCED Electronics Development GmbH and Co KG   (Germany)

Author keywords

Cosmic radiation; Failure rate; Power devices; Single event effects

Indexed keywords

COSMIC RAYS; COSMOLOGY; FAILURE ANALYSIS; OUTAGES; RADIATION EFFECTS; SILICON CARBIDE; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS;

ACCELERATED TESTING; ENERGETIC NEUTRONS; FAILURE RATE; POWER DEVICES; RADIATION HARDNESS; RELIABILITY PROBLEMS; SEMICONDUCTOR SUBSTRATE; SINGLE EVENT EFFECTS;

POWER SEMICONDUCTOR DEVICES;

EID: 38449110044     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.851     Document Type: Conference Paper

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