Temperature-dependent degradation mechanisms of threshold voltage in La2 O3-gated n-channel metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 108, Issue 6, 2010, Pages

  Wang, Ming Tsong ^a,b   Hsu, De Cheng ^a   Juan, Pi Chun ^a,c   Wang, Y L ^a,b   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC HYDROGEN; DEGRADATION MECHANISM; EXPONENTIAL DEPENDENCE; GATE LEAKAGES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; N-CHANNEL; OXIDE TRAP CHARGE; POSITIVE BIAS TEMPERATURE INSTABILITIES; STRESS TIME; STRESS VOLTAGES; SUBTHRESHOLD SLOPE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE;

ACTIVATION ENERGY; DEGRADATION; DIELECTRIC DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); ION BEAMS; MOSFET DEVICES; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 77957743865     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3482057     Document Type: Article

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