Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O 3 gate dielectric

Journal of Applied Physics

Volumn 100, Issue 7, 2006, Pages

  Hsu, Chih Hsiang ^a   Wang, Ming Tsong ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; RELIABILITY PROPERTIES; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB); WEIBULL SLOPES;

CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GATES (TRANSISTOR); LANTHANUM COMPOUNDS; MATHEMATICAL MODELS;

MOSFET DEVICES;

EID: 33749987513     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2356902     Document Type: Article

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