Benchmarking of IIIV n-MOSFET maturity and feasibility for future CMOS

IEEE Electron Device Letters

Volumn 31, Issue 10, 2010, Pages 1110-1112

  Doornbos, Gerben ^a   Passlack, Matthias ^a  

^a TSMC Europe BV   (Belgium)

Author keywords

CMOS; high dielectrics; high mobility channel; MOSFET; PHEMT; QWFET

Indexed keywords

CMOS; HIGH-MOBILITY CHANNEL; MOS-FET; PHEMT; QWFET;

INDIUM ARSENIDE; MOSFET DEVICES; SEMICONDUCTING INDIUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957560948     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2063012     Document Type: Article

References (24)

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