High performance 35nm LGATE CMOS transistors featuring NiSi metal gate (FUSI), uniaxial strained silicon channels and 1.2nm gate oxide

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 217-220

  Ranade, P ^a   Ghani, T ^a   Kuhn, K ^a   Mistry, K ^a   Pae, S ^a   Shifren, L ^a   Stettler, M ^a   Tone, K ^a   Tyagi, S ^a   Bohr, M ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRODES; GATES (TRANSISTOR); NICKEL COMPOUNDS; SILICON;

GATE OXIDES; GATE STACKS; METAL GATES; UNIAXIAL STRAINED SILICON CHANNELS;

CMOS INTEGRATED CIRCUITS;

EID: 33847757121     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. T. Ghani et al, IEDM 2003, p. 197
2. P. Bai et al, IEDM 2004, p. 657
3. W. Maszara et al, IEDM 2002, p. 367
4. J. Kedzierski et al, IEDM 2002, p. 247
5. C. Cabral et al, VLSI 2004, p. 184