Sub-MMW active integrated circuits based on 35 nm InP HEMT technology

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2009, Pages 185-187

  Lai, R ^a   Deal, W R ^a   Radisic, V ^a   Leong, K ^a   Mei, X B ^a   Sarkozy, S ^a   Gaier, T ^b   Samoska, L ^b   Fung, A ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INP HEMT; OSCILLATOR MODULE;

HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM; INDIUM PHOSPHIDE; LOW NOISE AMPLIFIERS; MICROWAVE CIRCUITS;

INTEGRATED CIRCUITS;

EID: 70349511811     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2009.5012474     Document Type: Conference Paper

References (5)

1. R. Lai et al, "Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz" IEEE IEDM Digest, Dec, 2007.
2. Z. Griffith et. al. "Sub 300 nm InGaAs/InP Type I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz ft", Proceedings from IPRM Digest 2007.
3. A. Tessmann et. al, "Metamorphic H-Band Low- Noise Amplifier MMICs, " Proceedings from IEEE MTT-S International Microwave Symposium Digest, June 2007, Honolulu, HI.
4. L. Samoska et al., "A Submillimeter-wave HEMT Amplifier Module with Integrated Waveguide Transitions Operating Above 300 GHz," IEEE Transactions on Microwave Theory and Techniques, October, 2007.
5. Vesna Radisic et. al, "A 330-GHz MMIC Oscillator Module," IEEE IMS Dig., June, 2008.