Formation of silicon-based molecular electronic structures using flip-chip lamination

Journal of the American Chemical Society

Volumn 131, Issue 34, 2009, Pages 12451-12457

  Coll, Mariona ^a,b   Miller, Lauren H ^a   Richter, Lee J ^a   Hines, Daniel R ^c   Jurchescu, Oana D ^a   Gergel Hackett, Nadine ^a   Richter, Curt A ^a   Hacker, Christina A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Bldg 142   (United States)

^c LABORATORY FOR PHYSICAL SCIENCES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED PRESSURE; CHEMICAL BONDINGS; CHEMICALLY BONDED; DEFECT-FREE; DENSE MONOLAYERS; ELECTRICAL CONTACTS; ELECTRICAL CURRENT; ELECTRICAL DATA; FLEXIBLE SUBSTRATE; FLIP CHIP; FUNCTIONALIZED; HIGH QUALITY; INTERFACIAL REACTIONS; METAL FILAMENTS; MOLECULAR JUNCTION; NANOTRANSFER PRINTING (NTP); P-POLARIZED; REFLECTION ABSORPTION INFRARED SPECTROSCOPY; SELF-ASSEMBLED; SI (1 1 1); SILICON ELECTRODE; SILICON-BASED; WATER CONTACT ANGLE;

ABSORPTION SPECTROSCOPY; CHEMICAL BONDS; CONTACT ANGLE; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; FLIP CHIP DEVICES; INFRARED SPECTROSCOPY; LAMINATING; MOLECULAR ELECTRONICS; SILICON; SPECTROSCOPIC ANALYSIS; SPECTROSCOPIC ELLIPSOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

SELF ASSEMBLED MONOLAYERS;

GOLD; SELF ASSEMBLED MONOLAYER; SILICON; WATER;

ARTICLE; CHEMICAL BINDING; CHEMICAL REACTION; CONTACT ANGLE; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRODE; ELLIPSOMETRY; INFRARED SPECTROSCOPY; MOLECULAR ELECTRONICS; NANOFABRICATION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 69349098016     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja901646j     Document Type: Article

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